Control of Si Crystal Growth during Solidification of Si-Al Melt
نویسندگان
چکیده
منابع مشابه
Modelling of physical phenomena on Si melt during crystal growth process by Directional solidification method
Numerical simulation is a comprehensive tool in modern process development which is extensively used for promotion of crystal growth processes. Multi-crystalline silicon is an important material with advantages of low-production cost and high conversion efficiency of PV solar cells. The control of grains as well as the grain boundaries is particularly important to the crystal quality and thus t...
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Controlling the growth of eutectic Si and thereby modifying the eutectic Si from flake-like to fibrous is a key factor in improving the properties of Al-Si alloys. To date, it is generally accepted that the impurity-induced twinning (IIT) mechanism and the twin plane re-entrant edge (TPRE) mechanism as well as poisoning of the TPRE mechanism are valid under certain conditions. However, IIT, TPR...
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ژورنال
عنوان ژورنال: MATERIALS TRANSACTIONS
سال: 2010
ISSN: 1345-9678,1347-5320
DOI: 10.2320/matertrans.m2010001